1 ELM34408AA-N general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-ambient steady-state rja 50 c /w parameter symbol limit unit note drain-source voltage vds 30 v gate-source voltage vgs 20 v continuous drain current ta=25c id 8 a ta=70c 6 pulsed drain current idm 32 a 3 power dissipation ta=25c pd 2.5 w ta=70c 1.6 junction and storage temperature range tj, tstg -55 to 150 c ELM34408AA-N uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=30v ? id=8a ? rds(on) < 18m (vgs=10v) ? rds(on) < 30m (vgs=4.5v) 4 - single n-channel mosfet pin configuration circuit sop-8(top view) pin no. pin name 1 source 2 source 3 source 4 gate 5 drain 6 drain 7 drain 8 drain 4 3 2 1 5 6 7 8 s g d
2 ELM34408AA-N electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=250a, vgs=0v 30 v zero gate voltage drain current idss vds=24v, vgs= 0v 1 a vds=20v, vgs= 0v, tj=55c 10 gate-body leakage current igss vds=0v, vgs= 20v 100 na gate threshold voltage vgs(th) vds=vgs, id=250 a 1.0 1.5 2.5 v on state drain current id(on) vgs=10v, vds=5v 8 a 1 static drain-source on-resistance rds(on) vgs=10v, id= 8a 15 18 m 1 vgs = 4.5v, id =7 a 22 30 m forward transconductance gfs vds =1 5v, id =8 a 16 s 1 diode forward voltage vsd if = 1a, vgs=0v 1.1 v 1 max. body -diode continuous current is 2.3 a pulsed body -diode current ism 4.6 a 3 dynamic parameters input capacitance ciss vgs=0v, vds=15v, f=1mhz 1200 pf output capacitance coss 220 pf reverse transfer capacitance crss 100 pf switching parameters total gate charge qg vgs=4.5v, vds=15v, id=2a 15.0 20.0 nc 2 gate-source charge qgs 5.8 nc 2 gate-drain charge qgd 3.8 nc 2 turn - on delay time td(on) vgs=10v, vds=15v, id1a rgen=0.2 11 18 ns 2 turn - on rise time tr 17 26 ns 2 turn - off delay time td(off) 37 54 ns 2 turn - off fall time tf 20 30 ns 2 body diode reverse recovery time trr if = 2.3a, dl/dt=100a/ s 50 80 ns ta=25 c note : 1. pulsed width300sec and duty cycle2%; 2. independent of operating temperature; 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%. single n-channel mosfet 4 -
3 typical electrical and thermal characteristics ELM34408AA-N 4 - single n-channel mosfet 3 mar - 2 1 - 200 5 n - channel enhancement mode field effect transistor p1803b vg sop - 8 lead free niko - sem
4 ELM34408AA-N single n-channel mosfet 4 - 4 mar - 2 1 - 200 5 n - channel enhancement mode field effect transistor p1803b vg sop - 8 lead free niko - sem maximum safe operating area i ,drain current( a ) single pulse v = 10v 10 d c gs ds ds(on) r limit dc 100s 1s 10s v ,drain - source voltage -1 0 10 1 10 2 10 0 10 1 10 2 10 10 -1 10 -2 1ms 10ms 100ms r = 125 c/w ja t = 25 c a
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